Patent · US Active

Power semiconductor module with low gate path inductance

US11018109B2 · kind B2 · utility

0Cited by

2References

27Claims

0Family size

Assignees

ABB Power Grids Switzerland AG · CH
AUDI AG · DE

Inventors

Didier Cottet · Zürich, CH
Felix Traub · Sindelfingen, DE
Jürgen Schuderer · Zürich, CH
Andreas Apelsmeier · Pollenfeld, DE
Johann Asam · Adelzhausen, DE

Key dates

Filing date	Jun 17, 2019
Grant date	May 25, 2021
Priority date	—
Expiry date	Jun 17, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/30107
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A power semiconductor module, including a housing; a power semiconductor chip within the housing; power terminals protruding from the housing and electrically interconnected with power electrodes of the semiconductor chip; and auxiliary terminals protruding from the housing and electrically interconnected with a gate electrode and one of the power electrodes; wherein three auxiliary terminals are arranged in a coaxial auxiliary terminal arrangement, which comprises an inner and two outer auxiliary terminals, which are arranged on opposing sides of the inner auxiliary terminal. The inner auxiliary terminal is electrically interconnected with the gate electrode or one of the power electrodes and the two outer auxiliary terminals are electrically connected with the other one of the gate electrode and the one of the power electrodes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.