Semiconductor device, manufacturing method, and solid-state imaging device
US11018110B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2017 |
| Grant date | May 25, 2021 |
| Priority date | — |
| Expiry date | Oct 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/35121
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present technology relates to a semiconductor device, a manufacturing method, and a solid-state imaging device which are capable of suppressing a decrease in bonding strength and preventing a poor electrical connection or peeling when two substrates are bonded to each other. Provided is a semiconductor device, including: a first substrate including a first electrode including a metal; and a second substrate bonded to the first substrate and including a second electrode including a metal. An acute-angled concavo-convex portion is formed on a side surface of a groove in which the first electrode is formed and a side surface of a groove in which the second electrode metal-bonded to the first electrode is formed. The present technology can be, for example, applied to a solid-state imaging device such as a CMOS image sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.