Semiconductor body

US11018278B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Joachim Hertkorn · Neukirchen, DE
• Marcus Eichfelder · Regensburg, DE

Key dates

• Filing date: Feb 28, 2018
• Grant date: May 25, 2021
• Expiry date: Feb 28, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A semiconductor body is disclosed. In an embodiment a semiconductor body includes a p-doped region, an active region, an intermediate layer and a layer stack containing indium, wherein an indium concentration in the layer stack changes along a stacking direction, wherein the layer stack is formed with exactly one nitride compound semiconductor material apart from dopants, wherein the intermediate layer is nominally free of indium, arranged between the layer stack and the active region, and directly adjoins the layer stack, wherein the intermediate layer and/or the layer stack are n-doped at least in places, wherein a dopant concentration of the layer stack is at least 5*1017 1/cm3 and at most 2*1018 1/cm3, and wherein a dopant concentration of the intermediate layer is at least 2*1018 1/cm3 and at most 3*1019 1/cm3.