Patent · US Active

Reduction of surface recombination losses in micro-LEDs

US11018280B2 · kind B2 · utility

2Cited by

13References

16Claims

0Family size

Assignee

Facebook Technologies, LLC · US

Inventors

Thomas Lauermann · Heilbronn, DE
Stephan Lutgen · Regensburg, DE
David Hwang · Fort Collins, US

Key dates

Filing date	Feb 25, 2020
Grant date	May 25, 2021
Priority date	—
Expiry date	Feb 25, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/8242
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter of less than 10 μm. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.