High-output power quarter-wavelength shifted distributed feedback laser diode
US11018475B2 · kind B2 · utility
1Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2019 |
| Grant date | May 25, 2021 |
| Priority date | — |
| Expiry date | Sep 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/02
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a quarter-wavelength shifted distributed feedback laser diode. The laser diode includes a substrate having a laser diode section and a phase adjustment section, a waveguide layer on the substrate, a clad layer on the waveguide layer, a grating disposed in the clad layer in the laser diode section, an anti-reflection coating disposed on one side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the laser diode section, and a high reflection coating disposed on the other side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the phase adjustment section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.