Bulk acoustic wave resonators having doped piezoelectric material and an adhesion and diffusion barrier layer
US11018651B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2018 |
| Grant date | May 25, 2021 |
| Priority date | — |
| Expiry date | Sep 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/877
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Bulk acoustic wave (BAW) resonators, and electrical filters that incorporate the BAW resonators, are described. Generally, the BAW resonators comprise a substrate comprising an acoustic reflector; a first electrode disposed over the acoustic reflector; a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising scandium-doped aluminum nitride (ASN); a diffusion barrier layer disposed over the piezoelectric layer; and a second electrode disposed over the diffusion barrier layer. The diffusion barrier layer configured to prevent diffusion of material of the first electrode into the piezoelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.