Photoresist removal method using residue gas analyzer
US11020778B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 4, 2019 |
| Grant date | Jun 1, 2021 |
| Priority date | — |
| Expiry date | Nov 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photoresist removal method is provided. The photoresist removal method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The photoresist removal method further includes selecting one of the tested recipes as a process recipe based on the analysis results from the residue gas analyzer and at least one expected performance criterion. In addition, the photoresist removal method includes performing a plasma ash process on a semiconductor substrate according to the process recipe to remove a photoresist layer from the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.