Sputtering method
US11021788B2 · kind B2 · utility
1Cited by
0References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2018 |
| Grant date | Jun 1, 2021 |
| Priority date | — |
| Expiry date | Jan 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32051
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A sputtering method of forming a thin film by allowing a target material to react with a gas includes narrowing down film deposition conditions from an existing period of nitrogen radicals by focusing on a nitriding process in thin-film forming processes when the thin film is formed by pulsing a waveform of electric current from a DC power supply at the time of generating plasma and applying the electric current to the target material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.