Magnetoresistance element with increased operational range
US11022661B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2018 |
| Grant date | Jun 1, 2021 |
| Priority date | — |
| Expiry date | May 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3268
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance (MR) element includes a first stack portion comprising a first plurality of layers including a first spacer layer having a first thickness and a first material selected to result in the first stack portion having a first sensitivity to the applied magnetic field. The MR element also has a second stack portion comprising a second plurality of layers, including a second spacer layer having a second thickness to result in the second stack portion having a second sensitivity to the applied magnetic field. The first thickness may be different than the second thickness resulting in the first sensitivity being different than the second sensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.