Three-axis magnetic sensor having perpendicular magnetic anisotropy and in-plane magnetic anisotropy
US11022662B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2017 |
| Grant date | Jun 1, 2021 |
| Priority date | — |
| Expiry date | Mar 6, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/066
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A three-axis magnetic sensor which is not physically separated from each other and made of one element is provided. A spin-orbit torque is generated through an interface junction between a magnetization seed layer and a magnetization free layer, and through this, a change in an in-plane magnetic field may be sensed in the form of current or voltage in the magnetization seed layer. Further, a tunneling insulating layer and a magnetization pinned layer are formed on the magnetization free layer. The formed structure induces a tunnel magneto-resistance phenomenon. Through this, a change in a magnetic field in a vertical direction is sensed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.