Electro-optically active device
US11022824B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2017 |
| Grant date | Jun 1, 2021 |
| Priority date | — |
| Expiry date | Nov 23, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/108
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A silicon based electro-optically active device and method of production thereof. The device comprising: a silicon-on-insulator (SOI) layer; an electro-optically active stack, disposed on top of the SOI layer: a first epitaxially grown structure comprising a first passive waveguide and a second epitaxially grown structure comprising a second passive waveguide, the first and second passive waveguides being disposed adjacent to respective sides of the electro-optically active stack, wherein the first and second passive waveguides are configured to edge couple light from the first passive waveguide into the electro-optically active stack and from the electro-optically active stack into the second passive waveguide; and an evanescent coupling structure, for evanescently coupling light between the SOI layer and the first and second passive waveguides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.