Semiconductor circuit, driving method, and electronic device with less disturbance
US11024346B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 10, 2018 |
| Grant date | Jun 1, 2021 |
| Priority date | — |
| Expiry date | May 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K3/012
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor circuit includes a first circuit to apply an inverted voltage of a voltage at a first node to a second node, a second circuit to apply an inverted voltage of a voltage at the second node to the first node, a first transistor that includes a gate, a drain, and a source, and stores a threshold state, a second transistor that couples the first node to a first terminal by being turned on, a third transistor that couples a first predetermined node to the gate of the first transistor, and a driving section that controls operations of the second transistor and the third transistor, and applies a control voltage to a second terminal. The first terminal is one of the drain or the source of the first transistor. The second terminal is another of the drain or the source of the first transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.