Dual demarcation voltage sensing before writes
US11024380B2 · kind B2 · utility
0Cited by
7References
11Claims
0Family size
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Key dates
| Filing date | Nov 15, 2019 |
| Grant date | Jun 1, 2021 |
| Priority date | — |
| Expiry date | Nov 15, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2263
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Nonvolatile memory (e.g. phase change memory) devices, systems, and methods that minimize energy expenditure and wear while providing greatly improved error rate with respect to marginal bits are disclosed and described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.