Magnetically stabilized magnetic Josephson junction memory cell
US11024791B1 · kind B1 · utility
5Cited by
60References
20Claims
0Family size
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Key dates
| Filing date | Jan 27, 2020 |
| Grant date | Jun 1, 2021 |
| Priority date | — |
| Expiry date | Jan 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N69/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell is provided that comprises a first superconductor electrode, a second superconductor electrode, and a magnetic Josephson junction (MJJ) stack disposed between the first superconductor electrode and the second superconductor electrode. The MJJ stack includes a magnetic reference layer and a magnetic storage layer. The memory cell further comprises a magnetically stabilizing structure disposed between the MJJ stack and the second superconductor electrode, wherein the magnetic stabilizing structure magnetically couples with the magnetic reference layer to strengthen the fixed state of the magnetic reference layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.