Patent · US Active

Glass for semiconductor processing

US11028005B2 · kind B2 · utility

0Cited by
3References
7Claims
0Family size

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Key dates

Filing dateAug 28, 2020
Grant dateJun 8, 2021
Priority date
Expiry dateAug 28, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2221/68386
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

To provide a glass plate having a high Young's modulus and a high devitrification viscosity. A glass includes, in mol % based on oxides: SiO2 of 30.0 to 50.0%; B2O3 of 10.0 to 30.0%; Al2O3 of 10.0 to 30.0%; Y2O3 of 3.0 to 17.0%; and Gd2O3 of 3.5 to 17.0%, in which (Gd2O3+Y2O3) is from 16.0 to 22.0%, and (Gd2O3/Y2O3) is from 0.15 to 7.0.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.