Write efficiency in magneto-resistive random access memories
US11031061B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2019 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Sep 27, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/028
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system and method include determining, by a memory controller associated with a memory device, a value of a parameter of a write pulse for a plurality of bits of a B-bit word to be stored in the memory device. The value of the parameter is based upon a relative importance of a bit position of the plurality of bits in the B-bit word to a performance of a machine learning or signal processing task involving the B-bit word, a fidelity metric, and a resource metric. The system and method also include writing each of the plurality of bits of the B-bit word in a different sub-array of the memory device using the write pulse generated based on the value of the parameter determined for a particular one of the plurality of bits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.