Semiconductor devices and methods of fabricating a deep trench isolation structure
US11031281B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 4, 2019 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Jun 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to various embodiments, a semiconductor device may include: a semiconductor substrate; a deep trench extending from a first portion of the semiconductor substrate to a second portion of the semiconductor substrate, wherein the second portion underlies the first portion; and an insulator region at least substantially lining sides of the deep trench. The insulator region includes at least one shallow trench in the first portion of the semiconductor substrate. At least a portion of the shallow trench(es) is arranged over at least a portion of the deep trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.