Semiconductor memory device having contact element of rectangular shape
US11031336B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2019 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Apr 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An SRAM device and method of forming include pass gate (PG), pull-down (PD), and pull-up (PU) transistors. A first gate line of the PG and a second gate line of the PD and the PU extend in a first direction. A common source/drain of the PG, PD, and PU transistors interposes the first and second gate lines and another source/drain of the PG transistor. A first contact extends from the common source/drain and a second contact extends from the another source/drain. A third contact is disposed above the second contact with a first width in the first direction and a first length in a second direction, first length being greater than the first width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.