Image sensor and method of manufacturing the same
US11031425B2 · kind B2 · utility
1Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2019 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Jul 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
An image sensor includes a substrate including a pixel region and a pad region, a first conductive pad on the substrate in the pad region, a micro lens layer on the substrate in the pixel region, and a first protective pattern covering the pad region and exposing the first conductive pad. The first protective pattern and the micro lens layer include the same material, and the first protective pattern and the micro lens layer are apart from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.