Image sensor
US11031428B2 · kind B2 · utility
3Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2020 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Jun 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a semiconductor substrate having first and second surfaces facing each other and a first device isolation layer provided in the semiconductor substrate. The first device isolation layer defines pixel regions of the semiconductor substrate and includes first and second portions crossing each other. The first and second portions are provided to surround one of the pixel regions, and the first portion is provided to extend from the first surface of the semiconductor substrate toward the second surface and to have a structure inclined relative to the first surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.