Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture
US11031478B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2018 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Jan 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0297
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a trench extending into a first main surface of a semiconductor substrate, and a gate electrode and a gate dielectric in the trench. The gate dielectric separates the gate electrode from the semiconductor substrate. A first region having a first conductivity type is formed in the semiconductor substrate at the first surface adjacent the trench. A second region having a second conductivity type is formed in the semiconductor substrate below the first region adjacent the trench. A third region having the first conductivity type is formed in the semiconductor substrate below the second region adjacent the trench. A contact opening in the semiconductor substrate extends into the second region. An electrically insulative spacer is disposed on sidewalls of the semiconductor substrate formed by the contact opening, and an electrically conductive material in the contact opening adjoins the electrically insulative spacer on the sidewalls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.