Semiconductor structure comprising III-N material
US11031492B2 · kind B2 · utility
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Key dates
| Filing date | Mar 1, 2017 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Oct 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure comprising III-N materials, includes: a support substrate; a main layer of III-N material, the main layer comprising a first section disposed on the support substrate and a second section disposed on the first section; an inter-layer of III-N material, disposed between the first section and the second section in order to compress the second section of the main layer, wherein the structure's inter-layer consists of a lower layer disposed on the first section and an upper layer disposed on the lower layer and formed by a superlattice.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.