Semiconductor device including transistor using oxide semiconductor
US11031506B2 · kind B2 · utility
1Cited by
17References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2019 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Aug 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A highly reliable semiconductor device is provided. The semiconductor device includes a first oxide; a second oxide, a first layer, and a second layer over the first oxide; an insulator over the second oxide; a first conductor over the insulator; a second conductor over the first layer; and a third conductor over the second layer. Each of the first and second layers includes a region with a thickness ranging from 0.5 nm to 3 nm. Each of the second and third conductors contains a conductive material having the physical property of extracting hydrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.