Semiconductor device and method of manufacture
US11031507B2 · kind B2 · utility
0Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2018 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Jul 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device and a method of manufacturing the said semiconductor device. The semiconductor device comprises a plurality of layers. The method of fabricating the semiconductor device comprises obtaining a substrate layer, arranging a first corresponding crystalline terminating oxide layer on the substrate layer, arranging at least one semiconductor layer on the first crystalline terminating oxide layer, arranging a second corresponding crystalline terminating oxide layer on the at least one semiconductor layer, and arranging an electrical insulating layer on the second crystalline terminating oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.