Advanced hydrogen passivation that mitigates hydrogen-induced recombination (HIR) and surface passivation deterioration in PV devices
US11031520B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2017 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Nov 22, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The present disclosure provides methodologies for manufacturing photovoltaic devices. In particular, the disclosure relates to the use of hydrogen during manufacturing of photovoltaic devices for passivating defects in the silicon and addressing light-induced degradation. The methodologies in the present disclosures take advantage of generation and manipulation of hydrogen in the neutral or charged state to optimise defect passivation. Some of the methodologies disclose use thermal treatments, illumination with sub-bandgap photons, electric fields or defects in the silicon to control the state of charge or hydrogen, move hydrogen to different locations in the device or retain hydrogen at specific locations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.