Reflective layers for light-emitting diodes
US11031527B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 29, 2018 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Jan 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
Abstract
A light-emitting diode (LED) chip with reflective layers having high reflectivity. The LED chip may include an active LED structure including an active layer between an n-type layer and a p-type layer. A first reflective layer is adjacent the active LED structure and comprises a plurality of dielectric layers with varying optical thicknesses. The plurality of dielectric layers may include a plurality of first dielectric layers and a plurality of second dielectric layers of varying thicknesses and compositions. The LED chip may further include a second reflective layer that includes an electrically conductive path through the first reflective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.