Radiation-emitting semiconductor chip

US11031534B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Roland Enzmann · Regensburg, DE
• Lorenzo Zini · Regensburg, DE
• Christian Muller · Weingarten, DE

Key dates

• Filing date: Mar 1, 2018
• Grant date: Jun 8, 2021
• Expiry date: Mar 1, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/81
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A radiation emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a carrier including a first main surface and a second main surface opposite to the first main surface, an n-doped layer and a p-doped layer forming a pn-junction and a vertical region starting from the first main surface and running parallel to side faces of the carrier, wherein the vertical region is n-doped, p-doped or electrically insulating, and wherein the vertical region extends within a boundary region of the carrier and completely encloses a central volume region of the carrier, an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation, the epitaxial semiconductor layer sequence being located at the first main surface of the carrier and two electrical contacts disposed on a front side of the semiconductor chip.