Light-activated switching resistor, an optical sensor incorporating a light-activated switching resistor, and methods of using such devices
US11031551B2 · kind B2 · utility
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3References
15Claims
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Key dates
| Filing date | Jul 17, 2018 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Jul 17, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/33
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A switching resistor comprises a dielectric layer disposed between a first electrode layer and a second electrode layer, the switching resistor having a high resistance state and a low resistance state. The switching resistor is responsive to a voltage bias, applied between the first electrode layer and the second electrode layer, wherein the voltage bias exceeds a threshold to switch from the high resistance state to the low resistance state. The switching resistor is sensitive to photo-illumination to reduce said threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.