Direct-deposition system including standoffs for controlling substrate-mask separation
US11035033B2 · kind B2 · utility
1Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2018 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Feb 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.