Sensing device comprising electrical components of high voltage domain and low voltage domain to perform quenching of a single photon avalanche diode
US11035725B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2020 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Feb 11, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/4466
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensing device that may include a substrate; a single-ended SPAD; first electrical components; second electrical components; and capacitors. The SPAD, the first electrical components and the second electrical components are formed on the substrate. The SPAD and the first electrical components belong to a high voltage domain of the sensing device. The high voltage domain is configured to receive a high supply voltage that exceeds a breakdown voltage of the SPAD. The second electrical components belong to a low voltage domain of the sensing device. The capacitors are coupled between the low voltage domain and the high voltage domain. The first electrical components and the second electrical components belong to an electrical circuit that is configured to perform quenching of the SPAD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.