Integrated electronic device comprising a temperature sensor and sensing method
US11035739B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Jul 6, 2020 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Jul 6, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/34
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.