Patent · US Active

Photoresist and manufacturing method of photoresist patterns

US11036141B2 · kind B2 · utility

0Cited by

3References

4Claims

0Family size

Assignee

BOE Technology Group Co., Ltd. · CN

Inventors

Ming Liu · Nanjing, CN
Yueping Zuo · Beijing, CN
Qiuhua Meng · Beijing, CN
Chunyang Wang · Hefei, CN
Fei FANG · Beijing, CN

Key dates

Filing date	May 29, 2019
Grant date	Jun 15, 2021
Priority date	—
Expiry date	Jul 16, 2039

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/168
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A photoresist and a method of manufacturing photoresist patterns are disclosed. The photoresist includes a plurality of photosensitive units, and each photosensitive unit has magnetism.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.