Memory control method, memory storage device and memory control circuit unit to determine a source block using interleaving information
US11036429B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2019 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Jul 31, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2212/7205
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The memory control method includes: determining a first management unit as a source block and reading valid data from a first continuous data unit in the first management unit according to first interleaving information and second interleaving information, wherein the first interleaving information reflects a total number of the first continuous data units in the first management unit, and the second interleaving information reflects a total number of second continuous data units in a second management unit; storing the valid data into a recycling block; and erasing the first management unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.