Fabrication methods of patterned metal film layer, thin film transistor and display substrate
US11037801B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2019 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Oct 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabrication method of a patterned metal film layer, including: sequentially depositing a first metal layer and a photoresist on a substrate; forming a first patterned photoresist in the photoresist retaining area; etching the first metal layer, and removing a part of the first metal layer having a first thickness and located in an edge area of the photoresist retaining area and in the photoresist removing area, to form a second metal layer; processing the first patterned photoresist to form a second patterned photoresist; etching and removing a part, which is not in contact with the second patterned photoresist, of the second metal layer on the substrate to form a patterned metal film layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.