Power semiconductor device and method of manufacturing the same, and power conversion device
US11037844B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2017 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Dec 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M7/5387
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device includes a casing, a first insulating circuit board, a second insulating circuit board, and a sealing material. The first insulating circuit board is disposed to be surrounded by the casing. The second insulating circuit board is surrounded by the casing and spaced from the first insulating circuit board so as to sandwich a semiconductor element between the first insulating circuit board and the second insulating circuit board. The sealing material fills a region surrounded by the casing. The first or second insulating circuit board is provided with a hole extending from one main surface to the other main surface opposite to one main surface. From at least a portion of an inner wall surface of the casing a protrusion extending to a region overlapping the first or second insulating circuit board in a plan view extends toward the region surrounded by the casing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.