Semiconductor devices
US11037930B2 · kind B2 · utility
3Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2019 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Oct 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
Abstract
A semiconductor device includes a substrate, a bit line structure on the substrate, a contact plug structure being adjacent to the bit line structure and extending in a vertical direction perpendicular to an upper surface of the substrate, and a capacitor electrically connected to the contact plug structure. The contact plug structure includes a lower contact plug, a metal silicide pattern, and an upper contact plug that are sequentially stacked on the substrate. The metal silicide pattern has an L-shaped cross section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.