Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching
US11038080B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2017 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Feb 1, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/52
Abstract
An optoelectronic device having a textured layer is described. In an aspect, a method may be used to produce the optoelectronic device, where the method includes epitaxially growing a semiconductor layer of the optoelectronic device on a growth substrate, and exposing the semiconductor layer to an etching process to create at least one textured surface in the semiconductor layer. The textured semiconductor layer can be referred to as a textured layer. The etching process is performed without the use of a template layer, or similar layer, configured as a mask to generate the texturing. The etching process can be done by one or more of a liquid or solution-based chemical etchant, gas etching, laser etching, plasma etching, or ion etching. The method can also include lifting the semiconductor layer of the optoelectronic device from the growth substrate by, for example, the use of an epitaxial lift off (ELO) process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.