Patent · US Active

Optoelectronic semiconductor chip

US11038083B2 · kind B2 · utility

4Cited by
2References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 4, 2017
Grant dateJun 15, 2021
Priority date
Expiry dateFeb 9, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/84

Abstract

An optoelectronic semiconductor chip includes a plurality of core-shell rods that generate electromagnetic radiation spaced apart from each other; a first electrically conductive contact structure for n-side electrical contacting of the core-shell rods; and a second electrically conductive contact structure for p-side electrical contacting of the core-shell rods, wherein the first electrically conductive contact structure and the second electrically conductive contact structure overlap at least in sections in a vertical direction, the optoelectronic semiconductor chip is surface mountable on a mounting side, and at least a partial region of the two electrically conductive contact structures extends through a breakthrough through at least one layer of the optoelectronic semiconductor chip.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.