Light-emitting device with a plurality of electrodes on a semiconductor stack
US11038085B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2019 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Sep 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.