High power amplifier circuit with protective feedback circuit
US11038479B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2018 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Apr 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H2242/26
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Disclosed is an amplifier circuit for providing an output of at least 100 W, preferably of at least 200 W and most preferably of at least 250 W comprising a field effect transistor. A drain of the field effect transistor is connected with a protective feedback circuit. The protective feedback circuit is arranged to reduce an over-voltage energy at the drain of the field effect transistor if the voltage between the gate and a drain of the field effect transistor exceeds a feedback threshold voltage. Further disclosed is a radio frequency amplifier comprising an amplifier circuit, an electrical radio frequency generator comprising the radio frequency amplifier and a plasma processing system comprising an electrical radio frequency generator. Still further disclosed is a method of protecting a field effect transistor in an amplifier circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.