Patent · US Active

Light emitting semiconductor device for generation of short light pulses

US11039515B2 · kind B2 · utility

0Cited by

5References

14Claims

0Family size

Assignee

AMS AG · AT

Inventors

Georg Roehrer · Lebring, AT
Robert Kappel · Sinsheim, DE
Nenad Lilic · Graz, AT

Key dates

Filing date	Jul 18, 2018
Grant date	Jun 15, 2021
Priority date	—
Expiry date	Jul 18, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/811
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

The device comprises a bipolar transistor with emitter, base, collector, base-collector junction and base-emitter junction, a collector-to-base breakdown voltage, a quenching component electrically connected with the base or the collector, and a switching circuitry configured to apply a forward bias to the base-emitter junction. The bipolar transistor is configured for operation at a reverse collector-to-base voltage above the breakdown voltage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.