Patent · US Active

Low noise ultrathin freestanding membranes composed of atomically-thin 2D materials

US11041247B2 · kind B2 · utility

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22Claims
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Key dates

Filing dateFeb 4, 2020
Grant dateJun 22, 2021
Priority date
Expiry dateFeb 4, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N33/48721
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The invention provides methods for direct growth of low noise, atomically thin freestanding membranes of two-dimensional monocrystalline or polycrystalline materials, such as transition metal chalcogenides including molybdenum disulfide. The freestanding membranes are directly grown over an aperture by reacting two precursors in a chemical vapor deposition process carried out at atmospheric pressure. Membrane growth is preferentially over apertures in a thin sheet of solid state material. The resulting membranes are one or a few atomic layers thick and essentially free of defects. The membranes are useful for sequencing of biopolymers through nanopores.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.