Gap-filling method
US11042093B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2018 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | May 11, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G2261/51
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device comprising: providing a semiconductor device substrate having a relief image on a surface of the substrate, the relief image having a plurality of gaps to be filled; applying a coating composition to the relief image to provide a coating layer, wherein the coating composition comprises (i) a polyarylene oligomer comprising as polymerized units one or more first monomers having two or more cyclopentadienone moieties and one or more second monomers having an aromatic moiety and two or more alkynyl moieties; wherein the polyarylene oligomer has a Mw of 1000 to 6000 Da, a PDI of 1 to 2, and a molar ratio of total first monomers to total second monomers of 1:>1; and (ii) one or more organic solvents; curing the coating layer to form a polyarylene film; patterning the polyarylene film; and transferring the pattern to the semiconductor device substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.