Patent · US Active

Photoetching apparatus and method

US11042099B2 · kind B2 · utility

0Cited by

1References

22Claims

0Family size

Assignee

SHANGHAI MICRO ELECTRONICS EQUIPMENT (GROUP) CO., LTD · CN

Inventors

Chang Zhou · Shanghai, CN
Zhiyong Yang · Beijing, CN
Linlin MA · Shanghai, CN

Key dates

Filing date	Mar 13, 2018
Grant date	Jun 22, 2021
Priority date	—
Expiry date	Mar 13, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG03F9/7034
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The lithography apparatus includes at least two exposure devices and one substrate device. The substrate device includes a substrate stage and a substrate supported by the substrate stage. The at least two exposure devices are disposed in symmetry to each other above the substrate with respect to a direction for scanning exposure and configured to simultaneously create two exposure fields onto the substrate to expose the portions of the substrate within the exposure fields.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.