Magnetic tunnel junction device and method of forming same
US11043251B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2019 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | Sep 10, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5615
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.