Memory devices with volatile and non-volatile behavior
US11043265B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2016 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | Aug 26, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An example device in accordance with an aspect of the present disclosure includes an active oxide layer to form and dissipate a conductive bridge. The conductive bridge is to dissipate spontaneously within a relaxation time to enable the memory device to self-refresh according to volatile behavior in response to the input voltage being below a threshold corresponding to disregarding sneak current and noise of a crossbar array in which the memory device is to operate. The conductive bridge is to persist beyond the relaxation time to enable the memory device to retain programming for neuromorphic computing training according to non-volatile behavior of the memory device in response to the input voltage not being below the threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.