Semiconductor device with vertically separated openings and manufacturing method thereof
US11043448B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2019 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | Jul 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a manufacturing method thereof are disclosed. In which a first opening and a second opening are vertically separated, and are no longer restricted by the condition that a deep upper opening needs to be filled with a thick photoresist when a TSV nested hole in vertical communication forms a middle opening and lower opening, thereby satisfying devices with different thicknesses requirements. The design is no longer restricted by the lateral process of the TSV nested hole, thereby enhancing the flexibility of the design. In the photolithography process, the deep hole does not need to be filled with the photoresist, the photoresist does not need to be thick, thereby reducing the complexity of the photolithography process and improving the exposure effect. The first metal layer and the second metal layer are directly led out via a first trench, thereby simplifying the process and reducing the production cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.