Light emitting diode and method of manufacturing the same
US11043609B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Sep 26, 2019 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | Nov 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
A light emitting diode includes an n-type confinement layer, a quantum well active layer formed on the n-type confinement layer, a p-type confinement layer formed on the quantum well active layer, a gallium phosphide-based quantum dot structure formed in the p-type confinement layer, and a GaP-based current spreading layer formed on the GaP-based quantum dot structure. A method of manufacturing the light emitting diode is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.