Edge emitting semiconductor laser and method of operating such a semiconductor laser
US11043791B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 5, 2018 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | Jun 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/02
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An edge emitting semiconductor laser and a method for operating an edge emitting semiconductor laser are disclosed. In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having an active zone configured to generate laser radiation from the material system AlInGaAs, a facet on the semiconductor layer sequence configured to couple-out and/or reflect the laser radiation and a protective layer sequence directly on the facet protecting the facet from damage, the protective layer sequence including a monocrystalline starting layer of a group 12 group 16 material, an intermediate layer of Si and at least one finishing layer consisting essentially of Al, Si and/or Ta and of O and optionally of N, so that the finishing layer is of a different material system than the starting layer and the intermediate layer, wherein the intermediate layer is oxidized on a side facing the finishing layer, and wherein the protective layer is arranged in a direction away from the semiconductor layer sequence in the indicated order.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.