Layered structures and electronic devices including the same
US11046885B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2018 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Mar 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/331
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A layered structure including a photoluminescent layer including a quantum dot polymer composite; a light absorption layer disposed on the photoluminescent layer, the light absorption layer including an absorptive color-filter material; and a silicon containing layer disposed between the photoluminescent layer and the light absorption layer, wherein the quantum dot polymer composite includes a first polymer matrix and a plurality of quantum dots dispersed in the first polymer matrix, and the plurality of quantum dots absorb excitation light and emits light in a longer wavelength than the wavelength of the excited light; and the absorptive color-filter material is dispersed in a second polymer matrix, and the absorptive color-filter material absorbs the excitation light that passes through the photoluminescent layer and transmits the light emitted from the plurality of quantum dots and an electronic device including the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.